A 5 GHz low noise amplifier on 0.35 μm BiCMOS SiGe
نویسندگان
چکیده
The Low Noise Amplifier (LNA) presented in this work offers a gain of 20 dB, a noise figure of 1.6 dB, with an input referred third-order intercept point of –4.5 dBm and a 1 dB compression point of -16 dBm at 5.2 GHz, using 0.35 μm BiCMOS SiGe. It operates on 5 V and requires 10 mA. The output and the input of the amplifier are matched internally to 50 Ω. The amplifier includes an image reject filter, an adaptive bias network, an RLC tank and input / output balun transformers. The image reject filter attenuates the image signal by providing low impedance at that frequency and is tuned by voltage control. An adaptive bias network is used, which allows the user to select the bias current in an adaptive manner, depending upon the requirements of the individual system. (Low NF, high gain, low consumption etc.)
منابع مشابه
Design of a 4.4 to 5 GHz LNA in 0.25µm SiGe BiCMOS technology
This paper describes a Low-Noise Amplifier (LNA), designed using a 0.25-μm SiGe process, operating in the 4.4– 5 GHz band. A power gain of 12.8 dB at 5 GHz has been achieved with a power consumption of 23.77 mW using a 2 V power supply. The noise figure is 2.2 dB while the input referred 1dB compression point is −6.2 dBm.
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